Superoxide radical derived metal-free spiro-OMeTAD for highly stable perovskite solar cells.

Lithium salt-doped spiro-OMeTAD is widely used as a hole-transport layer (HTL) for high-efficiency n-i-p perovskite solar cells (PSCs), but unfortunately facing awkward instability for commercialization arising from the intrinsic Li migration and hygroscopicity. We herein demonstrate a superoxide radicals (•O) derived HTL of metal-free spiro-OMeTAD with remarkable capability of avoiding the conventional tedious oxidation treatment in air for highly stable PSCs. Present work explores the employing of variant-valence Eu(TFSI) salts that could generate •O for facile and adequate pre-oxidation of spiro-OMeTAD, resulting in the HTL with dramatically increased conductivity and work function.

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers.

For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin III-Sb layers as quantum wells or in superlattices are well known. However, these alloys suffer from severe surface segregation problems, so that the actual profiles are very different from the nominal ones. Here, by inserting AlAs markers within the structure, state-of-the-art transmission electron microscopy techniques were used to precisely monitor the incorporation/segregation of Sb in ultrathin GaAsSb films (from 1 to 20 monolayers (MLs)).

Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate.

The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received considerable attention due to improved photovoltaic performance in QD solar cells. However, there is little data on the structural changes that occur during capping and their relation to different growth conditions. In this work, we studied the effect of AlA capping growth rate (CGR) on the structural features of InAs QDs in terms of shape, size, density, and average content.

Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications.

Recently, thin AlAs capping layers (CLs) on InAs quantum dot solar cells (QDSCs) have been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although it has been proposed that this improvement is due to the suppression of the capture of photogenerated carriers through the wetting layer (WL) states by a de-wetting process, the mechanisms that operate during this process are not clear. In this work, a structural analysis of the WL characteristics in the AlAs/InAs QD system with different CL-thickness has been made by scanning transmission electron microscopy techniques.

Interfacial Embedding of Laser-Manufactured Fluorinated Gold Clusters Enabling Stable Perovskite Solar Cells with Efficiency Over 24.

Tackling the interfacial loss in emerged perovskite-based solar cells (PSCs) to address synchronously the carrier dynamics and the environmental stability, has been of fundamental and viable importance, while technological hurdles remain in not only creating such interfacial mediator, but the subsequent interfacial embedding in the active layer. This article reports a strategy of interfacial embedding of hydrophobic fluorinated-gold-clusters (FGCs) for highly efficient and stable PSCs. The p-type semiconducting feature enables the FGC efficient interfacial mediator to improve the carrier dynamics by reducing the interfacial carrier transfer barrier and boosting the charge extraction at grain boundaries.

Optical Phase Transition in Semiconductor Quantum Metamaterials.

Unexpected light propagation effects, such as negative refraction, have been reported in artificial media. Leveraging on the intersubband resonances in heterostructured semiconductors, we show that all possible optical regimes, ranging from classical dieletric and metal to hyperbolic metamaterial types 1 and 2, can be achieved. As a demonstration, we prove that the negative refraction effect can occur at a designed frequency by controlling the electronic quantum confinement.

Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices.

Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a significant external quantum efficiency (EQE), with respect to the GaAsSbN bulk layers. Despite the difficulties in characterizing the distribution of N in dilute III-V nitride alloys, in this work we have obtained N-compositional mappings before and after rapid thermal annealing (RTA) in both types of structures, by using a recent methodology based on the treatment of different scanning transmission electron microscopy (STEM) imaging configurations. Texture analysis by gray level co-occurrence matrixes (GLCM) and the measurement of the degree of clustering are used to compare and evaluate the compositional inhomogeneities of N.

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer.

An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing the achievement of room-temperature (RT) emission.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots.

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system.