In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO on Fullerenes for Perovskite Photovoltaics.

In recent years, atomic layer deposition (ALD) has established itself as the state-of-the-art technique for the deposition of SnO buffer layers grown between the fullerene electron transport layer (ETL) and the ITO top electrode in metal halide perovskite-based photovoltaics. The SnO layer shields the underlying layers, i.e.