Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology.

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports.

Multi-layer graphene pirani pressure sensors.

The operating principle of Pirani pressure sensors is based on the pressure dependence of a suspended strip's electrical conductivity, caused by the thermal conductance of the surrounding gas which changes the Joule heating of the strip. To realize such sensors, not only materials with high temperature dependent electrical conductivity are required, but also minimization of the suspended strip dimensions is essential to maximize the responsivity and minimize the power consumption. Due to this, nanomaterials are especially attractive for this application.