Publications by authors named "Joost F W Maas"
J Mater Chem C Mater
January 2025
Article Synopsis
- Atomic Layer Etching (ALE) is crucial for creating complex 3D structures in integrated circuits, and new processes need to be explored to adapt ALE for various materials.
- A novel isotropic plasma ALE process using hexafluoroacetylacetone (Hhfac) combined with H plasma has been developed, achieving precise control of AlO film thickness with a stable etch rate of 0.16 nm per cycle and a high ALE synergy of 98%.
- Advanced techniques like Fourier transform infrared spectroscopy (FTIR) and density functional theory (DFT) simulations reveal that the ALE mechanism involves a balance between etching and surface inhibition reactions, allowing effective thickness control on a nanometer scale with minimal contamination.
