Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media.

SiO films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO films. On the top of the graphene layer, either continuous HfO or SiO films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively.