Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on AgO/β-GaO Heterojunction.

In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an AgO/β-GaO heterojunction was fabricated by depositing a p-type AgO thin film onto an n-type β-GaO layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 °C were investigated. Our DUV devices exhibited typical rectification characteristics.

AgO/β-GaO Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability.

Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/AgO layer is continuously deposited on a β-GaO epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p-n junction photodetector was constructed through the AgO/β-GaO heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time.

Physical Operations of a Self-Powered IZTO/β-GaO Schottky Barrier Diode Photodetector.

In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-GaO by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J-V characteristics of IZTO/β-GaO Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, β-GaO interfacial layer (IL) electron affinity, and the concentrations of interfacial traps.