Improving the Stability of High-Performance Multilayer MoS Field-Effect Transistors.

In this study, we propose a method for improving the stability of multilayer MoS field-effect transistors (FETs) by O plasma treatment and AlO passivation while sustaining the high performance of bulk MoS FET. The MoS FETs were exposed to O plasma for 30 s before AlO encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO layer formed during the plasma treatment was found between MoS and the top passivation layer.