Publications by authors named "Jonghyurk Park"

We report improved conductance by reducing the work function via incorporation of hydrogen into VO2 nanowires. The VO2 nanowires were prepared using the chemical vapor deposition method with V2O5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method.

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We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 10, transconductance around 47 nS, and mobility around 0.

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We demonstrate a highly sensitive and flexible bending strain sensor using tin-doped indium oxide (ITO) nanoparticles (NPs) assembled in line patterns on flexible substrates. By utilizing transparent ITO NPs without any surface modifications, we could produce strain sensors with adjustable gauge factors and optical transparency. We were able to control the dimensional and electrical properties of the sensors, such as channel height and resistance, by controlling the NP assembly speed.

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We synthesized black SnO single-crystal microplates via a sonochemical process and engineered the work function of the SnO microplates using thermal treatments. The as-synthesized SnO microplates have a wide (001) plane, as is clearly evident from TEM images and diffraction patterns. Surface potential measurements on the SnO microplates show that the work function changes as the annealing temperature increases.

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Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device.

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We observed giant enhancement of the Raman intensity from 4-Mpy molecules adsorbed on semiconducting one-dimensional ZnO nanostructures, nanowires and nanocones, without involving any noble metals. Interestingly, the enhancement is strongly dependent on the geometry of ZnO nanostructures and can mainly be explained by the cavity-like structural resonance of the electric field. Our results can be applied to systematically create hot spots for Raman signal enhancement using one-dimensional semiconducting nanomaterials.

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A continuous flow of hot electrons that are not at thermal equilibrium with the surrounding metal atoms is generated by the absorption of photons. Here we show that hot electron flow generated on a gold thin film by photon absorption (or internal photoemission) is amplified by localized surface plasmon resonance. This was achieved by direct measurement of photocurrent on a chemically modified gold thin film of metal-semiconductor (TiO(2)) Schottky diodes.

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We have successfully demonstrated a ZnO nanorod-based 3D nanostructure to show a high sensitivity and very fast response/recovery to hydrogen gas. ZnO nanorods have been synthesized selectively over the pre-defined area at relatively low temperature using a simple self-catalytic solution process assisted by a lithographic method. The conductance of the ZnO nanorod device varies significantly as the concentration of the hydrogen is changed without any additive metal catalyst, revealing a high sensitivity to hydrogen gas.

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We report a single-step, solution-based synthesis even at room temperature utilizing a facile sonochemical method to fabricate ZnO nanocrystalline films consisting of well-aligned nanorods.

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Recently, it has become increasingly important to control molecular layers, especially with regard to the formation of bilayers, in order to avoid electrical shorts in molecular electronics. In this paper, we report on the characterization of an in situ thiol-terminated bilayer that is formed by hydrogen bonding between the amine group of an aminoalkanethiol monolayer on a gold surface and the free amine group of aminoalkanethiolates in a bulk solution. We also report on the use of a rose bengal (RB) monolayer on a thiol-terminated bilayer for the purpose of application in a molecular memory device.

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