Strain-Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives.

Strain engineering is a powerful strategy that can strongly influence and tune the intrinsic characteristics of materials by incorporating lattice deformations. Due to atomically thin thickness, 2D materials are excellent candidates for strain engineering as they possess inherent mechanical flexibility and stretchability, which allow them to withstand large strains. The application of strain affects the atomic arrangement in the lattice of 2D material, which modify the electronic band structure.

Injectable 2D Material-Based Sensor Array for Minimally Invasive Neural Implants.

Intracranial implants for diagnosis and treatment of brain diseases have been developed over the past few decades. However, the platform of conventional implantable devices still relies on invasive probes and bulky sensors in conjunction with large-area craniotomy and provides only limited biometric information. Here, an implantable multi-modal sensor array that can be injected through a small hole in the skull and inherently spread out for conformal contact with the cortical surface is reported.

Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS Thin Film Transistors.

Strain engineering has been employed as a crucial technique to enhance the electrical properties of semiconductors, especially in Si transistor technologies. Recent theoretical investigations have suggested that strain engineering can also markedly enhance the carrier mobility of two-dimensional (2D) transition-metal dichalcogenides (TMDs). The conventional methods used in strain engineering for Si and other bulk semiconductors are difficult to adapt to ultrathin 2D TMDs.

Strain modulation in crumpled Si nanomembranes: Light detection beyond the Si absorption limit.

Although Si is extensively used in micro-nano electronics, its inherent optical absorption cutoff at 1100-nm limits its photonic and optoelectronic applications in visible to partly near infrared (NIR) spectral range. Recently, strain engineering has emerged as a promising approach for extending device functionality via tuning the material properties, including change in optical bandgap. In this study, the reduction in bandgap with applied strain was used for extending the absorption limit of crystalline Si up to 1310 nm beyond its intrinsic bandgap, which was achieved by creating the crumpled structures in Si nanomembranes (NMs).

Neurodiagnostic and neurotherapeutic potential of graphene nanomaterials.

Graphene has emerged as a highly promising nanomaterial for a variety of advanced technologies, including batteries, energy, electronics, and biotechnologies. Its recent contribution to neurotechnology is particularly noteworthy because its superior conductivity, chemical resilience, biocompatibility, thermal stability, and scalable nature make it well-suited for measuring brain activity and plasticity in health and disease. Graphene-mediated compounds are microfabricated in two central methods: chemical processes with natural graphite and chemical vapor deposition of graphene in a film form.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives.

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices.

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions.

Three-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality.

Perovskite Light-Emitting Diode Display Based on MoS Backplane Thin-Film Transistors.

The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas.

Kirigami-Structured, Low-Impedance, and Skin-Conformal Electronics for Long-Term Biopotential Monitoring and Human-Machine Interfaces.

Epidermal dry electrodes with high skin-compliant stretchability, low bioelectric interfacial impedance, and long-term reliability are crucial for biopotential signal recording and human-machine interaction. However, incorporating these essential characteristics into dry electrodes remains a challenge. Here, a skin-conformal dry electrode is developed by encapsulating kirigami-structured poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/polyvinyl alcohol (PVA)/silver nanowires (Ag NWs) film with ultrathin polyurethane (PU) tape.

Reduced Defect Density in MOCVD-Grown MoS by Manipulating the Precursor Phase.

Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS film.

Arthroscopic suprapectoral biceps tenodesis provided earlier shoulder function restoration compared with open subpectoral biceps tenodesis during the recovery phase.

Background: This study compared the clinical outcomes of open subpectoral biceps tenodesis and arthroscopic suprapectoral biceps tenodesis for symptomatic biceps tenosynovitis. Although both techniques have pros and cons, no studies have compared clinical and functional outcomes during the recovery phase. Previous studies show that suprapectoral tenodesis has a higher probability of Popeye deformity and postoperative bicipital pain and stiffness, whereas subpectoral tenodesis has a higher risk of nerve complications and wound infections.

Low-temperature growth of MoS on polymer and thin glass substrates for flexible electronics.

Recent advances in two-dimensional semiconductors, particularly molybdenum disulfide (MoS), have enabled the fabrication of flexible electronic devices with outstanding mechanical flexibility. Previous approaches typically involved the synthesis of MoS on a rigid substrate at a high temperature followed by the transfer to a flexible substrate onto which the device is fabricated. A recurring drawback with this methodology is the fact that flexible substrates have a lower melting temperature than the MoS growth process, and that the transfer process degrades the electronic properties of MoS.

Arthroscopic Latarjet procedure: current concepts and surgical techniques.

The Latarjet procedure is a surgical procedure that can effectively restore glenohumeral stability, especially in patients with anterior shoulder instability and glenoid bone loss. Many studies have shown comparable clinical outcomes between patients undergoing the arthroscopic Latarjet procedure and those undergoing traditional open methods or other glenohumeral joint stabilization procedures. However, the arthroscopic Latarjet procedure is a challenging technique due to the unfamiliar portal placements, proximity of neurovascular structures, and serious postoperative complications.

Occult, Incomplete, and Complete Posterior Labral Tears Without Glenohumeral Instability on Imaging Underestimate Labral Detachment.

Purpose: To introduce a classification of posterior labral tear and describe clinical characteristics, magnetic resonance imaging (MRI)/magnetic resonance arthrography (MRA) findings, arthroscopic findings, and outcomes after arthroscopic repair for patients with posterior labral tears without glenohumeral instability.

Methods: Sixty patients with posterior labral tear who underwent arthroscopic repair were analyzed retrospectively. Patients with shoulder instability were excluded.

Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low-Cost Flexible Electronics.

Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process.

Highly Trustworthy In-Sensor Cryptography for Image Encryption and Authentication.

The prevailing transmission of image information over the Internet of Things demands trustworthy cryptography for high security and privacy. State-of-the-art security modules are usually physically separated from the sensory terminals that capture images, which unavoidably exposes image information to various attacks during the transmission process. Here we develop in-sensor cryptography that enables capturing images and producing security keys in the same hardware devices.

Optoelectronic graded neurons for bioinspired in-sensor motion perception.

Motion processing has proven to be a computational challenge and demands considerable computational resources. Contrast this with the fact that flying insects can agilely perceive real-world motion with their tiny vision system. Here we show that phototransistor arrays can directly perceive different types of motion at sensory terminals, emulating the non-spiking graded neurons of insect vision systems.

Transparent and Flexible Graphene Pressure Sensor with Self-Assembled Topological Crystalline Ionic Gel.

This study demonstrates transparent and flexible capacitive pressure sensors using a high- ionic gel composed of an insulating polymer (poly(vinylidene fluoride--trifluoroethylene--chlorofluoroethylene), P(VDF-TrFE-CFE)) blended with an ionic liquid (IL; 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl) amide, [EMI][TFSA]). The thermal melt recrystallization of the P(VDF-TrFE-CFE):[EMI][TFSA] blend films develops the characteristic topological semicrystalline surface of the films, making them highly sensitive to pressure. Using optically transparent and mechanically flexible graphene electrodes, a novel pressure sensor is realized with the topological ionic gel.

Technology Roadmap for Flexible Sensors.

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited.

Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction.

Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials. Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles.

Vertical Conductivity and Topography in Electrostrictive Germanium Sulfide Microribbon via Conductive Atomic Force Microscopy.

Layered group IV monochalcogenides are two-dimensional (2D) semiconducting materials with unique crystal structures and novel physical properties. Here, we report the growth of single crystalline GeS microribbons using the chemical vapor transport process. By using conductive atomic force microscopy, we demonstrated that the conductive behavior in the vertical direction was mainly affected by the Schottky barriers between GeS and both electrodes.

Wireless graphene-based thermal patch for obtaining temperature distribution and performing thermography.

Thermal imaging provides information regarding the general condition of the human body and facilitates the diagnosis of various diseases. Heat therapy or thermotherapy can help in the treatment of injuries to the skin tissue. Here, we report a wearable thermal patch with dual functions of continuous skin temperature sensing and thermotherapy for effective self-care treatment.

Wafer-scale monolithic integration of full-colour micro-LED display using MoS transistor.

Large-scale growth of transition metal dichalcogenides and their subsequent integration with compound semiconductors is one of the major obstacles for two-dimensional materials implementation in optoelectronics applications such as active matrix displays or optical sensors. Here we present a novel transition metal dichalcogenide-on-compound-semiconductor fabrication method that is compatible with a batch microfabrication process. We show how a thin film of molybdenum disulfide (MoS) can be directly synthesized on a gallium-nitride-based epitaxial wafer to form a thin film transistor array.