Strain-Induced Bandgap Narrowing in Crumpled TMDs for NIR Light Detection.

Transition metal dichalcogenides (TMDs) such as MoS and WS emerge as promising materials in optoelectronics, especially for flexible photo- /image-sensors due to their direct bandgap nature. However, the intrinsic bandgaps of these semiconductor monolayers (e.g.

Recent advances in CMOS-compatible synthesis and integration of 2D materials.

The upcoming generation of functional electronics in the era of artificial intelligence, and IoT requires extensive data storage and processing, necessitating further device miniaturization. Conventional Si CMOS technology is struggling to enhance integration density beyond a certain limit to uphold Moore's law, primarily due to performance degradation at smaller dimensions caused by various physical effects, including surface scattering, quantum tunneling, and other short-channel effects. The two-dimensional materials have emerged as highly promising alternatives, which exhibit excellent electrical and mechanical properties at atomically thin thicknesses and show exceptional potential for future CMOS technology.