Synthesis of Numerous Edge Sites in MoS via SiO Nanorods Platform for Highly Sensitive Gas Sensor.

The utilization of edge sites in two-dimensional materials including transition-metal dichalcogenides (TMDs) is an effective strategy to realize high-performance gas sensors because of their high catalytic activity. Herein, we demonstrate a facile strategy to synthesize the numerous edge sites of vertically aligned MoS and larger surface area via SiO nanorod (NRs) platforms for highly sensitive NO gas sensor. The SiO NRs encapsulated by MoS film with numerous edge sites and partially vertical-aligned regions synthesized using simple thermolysis process of [(NH)MoS].

p-p Heterojunction of Nickel Oxide-Decorated Cobalt Oxide Nanorods for Enhanced Sensitivity and Selectivity toward Volatile Organic Compounds.

The utilization of p-p isotype heterojunctions is an effective strategy to enhance the gas sensing properties of metal-oxide semiconductors, but most previous studies focused on p-n heterojunctions owing to their simple mechanism of formation of depletion layers. However, a proper choice of isotype semiconductors with appropriate energy bands can also contribute to the enhancement of the gas sensing performance. Herein, we report nickel oxide (NiO)-decorated cobalt oxide (CoO) nanorods (NRs) fabricated using the multiple-step glancing angle deposition method.

Microscopic Evidence for Strong Interaction between Pd and Graphene Oxide that Results in Metal-Decoration-Induced Reduction of Graphene Oxide.

Graphene oxide (GO) is reduced spontaneously when palladium nanoparticles are decorated on the surface. The oxygen functional groups at the GO surface near the nanoparticles are absorbed to the palladium to produce a palladium oxide interlayer. Palladium therefore grows on the GO with preferred orientations, resulting in unique microstructural and electrical properties.

Synthesis of atomically thin transition metal disulfides for charge transport layers in optoelectronic devices.

Unlabelled: Metal sulfides (MeS2) such as MoS2 and WS2 were used as charge transport layers in organic light-emitting diodes (OLEDs) and organic photovoltaic (OPV) cells in order to enhance the stability in air comparing to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (

Pedot: PSS). MeS2 layers with a polycrystalline structure were synthesized by a chemical deposition method using uniformly spin-coated (NH4)MoS4 and (NH4)WS4 precursor solutions. The ultraviolet-ozone (UV-O3) treatment on MeS2 leads to the removal of the surface contaminants produced by the transfer process, resulting in a uniform surface and an increase of the work function.

Vertically ordered hematite nanotube array as an ultrasensitive and rapid response acetone sensor.

Vertically ordered nanotube array is a desirable configuration to improve gas sensing properties of the hematite which is the most abundant and cheapest metal oxide semiconductor on earth but has low and sluggish chemiresistive responses. We have synthesized a vertically aligned, highly ordered hematite nanotube array directly on a patterned SiO2/Si substrate and then it used as a gas sensor without additional processing. The nanotube array sensor shows unprecedentedly ultrahigh and selective responses to acetone with detection limits down to a few parts per billion and response time shorter than 3 s.

Geometry-induced dislocations in coaxial heterostructural nanotubes.

Highly localized dislocations in GaN/ZnO hetero-nanostructures are generated from the residual strain field by lattice mismatches at two interfaces: between the substrate and hetero-nanostructures, and between the ZnO core and GaN shell. The local strain field is measured using tranmission electron microscopy, and the relationship between the nanostructure morphology and the highly localized dislocations is analyzed by a finite element method.

Catalyst-free metal-organic chemical vapor deposition growth of InN nanorods.

We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 degrees C, complete InN nanorods with typical diameters of 150 nm and length of approximately 3.

Fibrous membrane of nano-hybrid poly-L-lactic acid/silica xerogel for guided bone regeneration.

Nanofibrous membranes, consisting of a poly(L-lactic acid) (PLLA)-silica xerogel hybrid material, were successfully fabricated from a hybrid sol using the electrospinning technique for guided bone regeneration (GBR) application. These hybrid nanofibers exhibited a homogeneous and continuous morphology, with a nano-sized dispersed silica xerogel phase in the PLLA fiber matrix. The mechanical properties, such as the tensile strength and the elastic modulus, were improved as the silica xerogel content increased up to 40%.

Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method.

We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates.

Scalable network electrical devices using ZnO nanowalls.

We report the fabrication and electrical characteristics of scalable nanowall network devices and their gas sensor applications. For the network device fabrications, two-dimensional ZnO nanowall networks were grown on AlN/Si substrates with a patterned SiO(2) mask layer using selective-area metal-organic vapor-phase epitaxy. The ZnO nanowalls with c-axis orientation were heteroepitaxially grown on AlN/Si substrates, and were single-crystalline, as determined by x-ray diffraction and transmission electron microscopy.

ZnO nanostructures with controlled morphologies on a glass substrate.

We report morphology-controlled selective growth of ZnO nanostructures on glass substrates by using catalyst-free metal-organic chemical vapor deposition. For the morphology-controlled selective growth, a microheating method using a series of microheaters was developed, which provided well-controlled local heating based on the microheater geometry and spatial arrangement. ZnO nanostructure morphology depended on the local growth temperature, so various nanostructure morphologies were obtained selectively at specific positions on glass substrates by using local microheating.

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO(2)/Pt system during resistive switching.

Position-controlled AlN/ZnO coaxial nanotube heterostructure arrays for electron emitter applications.

We studied the fabrication and field-emission characteristics of position-controlled AlN/ZnO nanotube heterostructure arrays. AlN layers with various thicknesses from 20 to 52 nm were deposited coaxially on the position-controlled ZnO nanotube arrays. The field-emission properties of the coaxial AlN/ZnO nanotube arrays were controlled using the AlN thickness and the nanotube interdistance.