Strong Zero-Phonon Transition from Point Defect-Stacking Fault Complexes in Silicon Carbide Nanowires.

Crystallographic defects such as vacancies and stacking faults engineer electronic band structure at the atomic level and create zero- and two-dimensional quantum structures in crystals. The combination of these point and planar defects can generate a new type of defect complex system. Here, we investigate silicon carbide nanowires that host point defects near stacking faults.

High-Crystalline Monolayer Transition Metal Dichalcogenides Films for Wafer-Scale Electronics.

Chemical vapor deposition (CVD) using liquid-phase precursors has emerged as a viable technique for synthesizing uniform large-area transition metal dichalcogenide (TMD) thin films. However, the liquid-phase precursor-assisted growth process typically suffers from small-sized grains and unreacted transition metal precursor remainders, resulting in lower-quality TMDs. Moreover, synthesizing large-area TMD films with a monolayer thickness is also quite challenging.

Position and Frequency Control of Strain-Induced Quantum Emitters in WSe Monolayers.

Future scalable and integrated quantum photonic systems require deterministic generation and control of multiple quantum emitters. Although various approaches for spatial and spectral control of the quantum emitters have been developed, on-chip control of both position and frequency is still a long-standing goal in solid-state quantum emitters. Here, we demonstrate simultaneous control of position and frequency of the quantum emitters from transition metal dichalcogenide monolayers.