Integrated Water-Level Sensor Using Thin-Film Transistor Technology.

A low-cost water-level sensor was developed utilizing a capacitive sensor design with only one thin-film transistor (TFT). The integration of the a-IGZO TFT process facilitated the complete integration of the water-level sensor on a substrate, including essential components, such as the transistor, capacitor, wires, and sensing electrode. This integration eliminates the need for a separate mounting process, resulting in a robust sensor assembly.

Effects of Annealing on an IGZO-Metal Interface.

The interface reaction between a metal layer and a layer of amorphous indium-gallium-zinc oxide was investigated. Oxygen atoms at the interface bond to the metal atoms and form metal oxide. The reaction depends on the annealing temperature and ambient conditions.

Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors.

Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer.