Ag Nanodots Emitters Embedded in a Nanocrystalline Thin Film Deposited on Crystalline Si Solar Cells.

We fabricated crystalline Si solar cells with the inclusion of various Ag nanodots into the additional emitters of nanocrystallite Si thin films. The fabricated process was carried out on the emitter surface of p-n junction for the textured p-type wafer. The Ag thin films were deposited on emitter surfaces and annealed at various temperatures.

Surface plasmon effect of Ag nanodots embedded in amorphous Si window layers deposited on Si solar cells.

We investigated solar cells containing temperature-dependent Ag nanodots embedded in an amorphous Si thin film layer by using hot-wire chemical vapor deposition in order to improve the properties of crystalline Si solar cells. An Ag thin film with a thickness of 10 nm was deposited by DC sputtering followed by annealing at various temperatures ranging from 250 to 850 degrees C for 15 min under N2 gas. As increasing the annealing temperature, the Ag nanodots were enlarged and the photoreflectances of the samples with Ag nanodots were lower than the reference samples in the spectral range of 200-600 nm, demonstrating the plasmon effect of Ag nanodots.