Oxidation Damage Evolution in Low-Cycle Fatigue Life of Niobium-Stabilized Austenitic Stainless Steel.

Austenitic stainless steel is a vital material in various industries, with excellent heat and corrosion resistance, and is widely used in high-temperature environments as a component for internal combustion engines of transportation vehicles or power plant piping. These components or structures are required to be durable against severe load conditions and oxidation damage in high-temperature environments during their service life. In this regard, in particular, oxidation damage and fatigue life are very important influencing factors, while existing studies have focused on materials and fracture behavior.

Very Smooth Ultrananocrystalline Diamond Film Growth by a Novel Pretreatment Technique.

Very smooth ultrananocrystalline diamond (UNCD) film growth on SiC substrate was achieved by a novel pretreatment technique consisted of SiC surface texturing and deaggregation of nanodiamond (ND) seed particles. Texturing of SiC surfaces in Ar and SF6/02 plasmas was found to be able to provide normalized roughness values of 0.5-7.

Anisotropic pattern transfer in ultrananocrystalline diamond films by inductively coupled plasma etching.

High density plasma etching of ultrananocrystalline diamond (UNCD) films wasperformed in O2 and O2/Ar inductively coupled plasma (ICP) discharges. The O2/Ar ICP discharges produced higher etch rates due to enhanced physical component of the etching, and a maximum etch rate of -280 nm/min was obtained in 10 sccm O2/5 sccm Ar discharges. Very high etch selectivities up to -140:1 were obtained for the UNCD over Al mask layer.

Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions.

The valence band discontinuity (ΔE(v)) of Y2O3/InGaZnO4 (IGZO) heterojunctions was measured by a core-level photoemission method. The Y2O3 exhibited a band gap of -6.27 eV from absorption measurements.

Synthesis and photoluminescence of novel Ba9Y2Si6O24:Eu2+ green phosphor.

Novel (Ba1_xEu(x))9Y2Si6O24 green phosphors were successfully prepared by a solid-state reaction method. The prepared (Ba1_xEu(x))9Y2Si6O24 green phosphors showed a single intense broadband emission in a range from 502 to 510 nm. The effects of the Eu2+ doping concentration on the optical properties were discussed under consideration of concentration quenching.