Microscopic Origin of Polarity-Dependent V Shift in Amorphous Chalcogenides for 3D Self-Selecting Memory.

Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self-selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization. This study investigates the mechanism behind the polarity-dependent threshold voltage shift (ΔV) through theoretical and experimental analyses.

Mechanism for Local-Atomic Structure Changes in Chalcogenide-based Threshold-Switching Devices.

Threshold-switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the local structures and difficulties in the trap analysis of multinary compounds. Furthermore, after threshold switching, the local structures gradually evolve to more stable energy states owing to the unstable homopolar bonds.

Author Correction: Surface plasmon enhanced Organic color image sensor with Ag nanoparticles coated with silicon oxynitride.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Surface plasmon enhanced Organic color image sensor with Ag nanoparticles coated with silicon oxynitride.

As organic photodetectors with less than 1 μm pixel size are in demand, a new way of enhancing the sensitivity of the photodetectors is required to compensate for its degradation due to the reduction in pixel size. Here, we used Ag nanoparticles coated with SiON as a light-absorbing layer to realize the scale-down of the pixel size without the loss of sensitivity. The surface plasmon resonance appeared at the interface between Ag nanoparticles and SiON.

Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature.

We report on the degradation process by water vapor of hydrogenated amorphous silicon oxynitride (SiON:H) films deposited by plasma-enhanced chemical vapor deposition at low temperature. The stability of the films was investigated as a function of the oxygen content and deposition temperature. Degradation by defects such as pinholes was not observed with transmission electron microscopy.

Anti-inflammatory effects of traditional mixed extract of medicinal herbs (MEMH) on monosodium urate crystal-induced gouty arthritis.

Korean oriental medicine prescription is widely used for the treatment of gouty diseases. In the present study, we investigated anti-inflammatory effects of modified Korean herbal formulation, mixed extract of medicinal herbs (MEMH), and its modulatory effects on inflammatory mediators associated with gouty arthritis. Both in vitro and in vivo studies were carried out to assess the anti-inflammatory efficacy of MEMH on monosodium urate (MSU) crystals-induced gouty inflammation.

Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device.

An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiON) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiON(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiON were carefully controlled and the detector performances such as dark current and thermal stability were investigated.

Quercetin induces apoptosis and cell cycle arrest in triple-negative breast cancer cells through modulation of Foxo3a activity.

Quercetin, a plant-derived flavonoid found in fruits, vegetables and tea, has been known to possess bioactive properties such as anti-oxidant, anti-inflammatory and anti-cancer. In this study, anti-cancer effect of quercetin and its underlying mechanisms in triple-negative breast cancer cells was investigated. MTT assay showed that quercetin reduced breast cancer cell viability in a time and dose dependent manner.

Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement.

Defect depth profiles of Cu (In1-x,Gax)(Se1-ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e.

The prediction of hole mobility in organic semiconductors and its calibration based on the grain-boundary effect.

A new reliable computational model to predict the hole mobility of poly-crystalline organic semiconductors in thin films was developed. Site energy differences and transfer integrals in crystalline morphologies of organic molecules were obtained from quantum chemical calculations, in which periodic boundary conditions were efficiently applied to capture the interactions with the surrounding molecules in the crystalline organic layer. Then the parameters were employed in kinetic Monte Carlo (kMC) simulations to estimate the carrier mobility.

Formation of hexagonal boron nitride by metal atomic vacancy-assisted B-N molecular diffusion.

Because of the low solubility of N atoms in metals, hexagonal boron nitride (h-BN) growth has explained by surface reaction on metal rather than by penetration/precipitation of B and N atoms in metal. Here, we present an impressive pathway of h-BN formation at the interface between Ni and oxide substrate based on B-N molecular diffusion into Ni through individual atomic vacancies. First-principles calculations confirmed the formation energies of the h-BN layers on and under the metal and the probability of B-N molecular diffusion in metal.

Role of hyaluronic acid and phospholipid in the lubrication of a cobalt-chromium head for total hip arthroplasty.

The tribological performance of total hip arthroplasty has an important influence on its success rate. This study examined the concentration-dependent role of hyaluronic acid (HA) and phospholipid (dipalmitoylphosphatidylcholine, DPPC) in the boundary lubricating ability of retrieved cobalt-chromium femoral heads. The microscale frictional coefficients (μ) were measured by atomic force microscopy using a rectangular silicon cantilever integrated with sharp silicon tips.

Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

The fabrication of controlled nanostructures such as quantum dots, nanotubes, nanowires, and nanopillars has progressed rapidly over the past 10 years. However, both bottom-up and top-down methods to integrate the nanostructures are met with several challenges. For practical applications with the high level of the integration, an approach that can fabricate the required structures locally is desirable.

Spatial control of quantum sized nanocrystal arrays onto silicon wafers.

Monolayer arrays of monodispersed nanocrystals (<10 nm) onto three dimensional (3D) substrates have considerable potential for various engineering applications such as highly integrated memory devices, solar cells, biosensors and photo and electro luminescent displays because of their highly integrated features with nanocrystal homogeneity. However, most reports on nanocrystal arrays have focused on two dimensional (2D) flat substrates, and the production of wafer-scale monolayer arrays is still challenging. Here we address the feasibility of arraying nanocrystal monolayers in wafer-scale onto 3D substrates.

Searching ultimate nanometrology for AlOx thickness in magnetic tunnel junction by analytical electron microscopy and X-ray reflectometry.

Practical analyses of the structures of ultrathin multilayers in tunneling magneto resistance (TMR) and Magnetic Random Access Memory (MRAM) devices have been a challenging task because layers are very thin, just 1-2 nm thick. Particularly, the thinness (approximately 1 nm) and chemical properties of the AlOx barrier layer are critical to its magnetic tunneling property. We focused on evaluating the current TEM analytical methods by measuring the thickness and composition of an AlOx layer using several TEM instruments, that is, a round robin test, and cross-checked the thickness results with an X-ray reflectometry (XRR) method.

Ambient pressure syntheses of size-controlled corundum-type In2O3 nanocubes.

Hydrolysis of In(O-iPr)3 by 10 molar excess of water at 90 degrees C in a surfactant/solvent mixture of oleylamine/oleic acid/trioctylamine provides very small nanoparticles (<5 nm in diameter) of In(O)(OH). Subsequent in situ thermolysis of the formed In(O)(OH) nanoparticles at 350 degrees C and ambient pressure produces monodisperse h-In2O3 nanocubes, which can form an extended two-dimensional array on a flat surface. The size of the In2O3 nanocubes (8, 10, and 12 nm) could be easily controlled by the simple change in the amounts of employed surfactants.

A sonochemical route to single-walled carbon nanotubes under ambient conditions.

A chemical route to single-walled carbon nanotubes (SWCNTs) under ambient conditions has been developed. Silica powder was immersed in a mixture solution of ferrocene and p-xylene. After sonication at atmospheric pressure and room temperature, we obtained high-purity SWCNTs.