The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells.

Atomic layer deposition (ALD) was used to fabricate Al(2)O(3) recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al(2)O(3) recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO(2) active layer and the HTM spiro-OMeTAD. The impact of Al(2)O(3) barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl(4) surface treatment.

Electron enrichment in 3d transition metal oxide hetero-nanostructures.

Direct experimental observation of spontaneous electron enrichment of metal d orbitals in a new transition metal oxide heterostructure with nanoscale dimensionality is reported. Aqueous chemical synthesis and vapor phase deposition are combined to fabricate oriented arrays of high-interfacial-area hetero-nanostructures comprised of titanium oxide and iron oxide nanomaterials. Synchrotron-based soft X-ray spectroscopy techniques with high spectral resolution are utilized to directly probe the titanium and oxygen orbital character of the interfacial region's occupied and unoccupied densities of states.

Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition.

Investment into photovoltaic (PV) research has accelerated over the past decade as concerns over energy security and carbon emissions have increased. The types of PV technology in which the research community is actively engaged are expanding as well. This review focuses on the burgeoning field of atomic layer deposition (ALD) for photovoltaics.

Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells.

Quantum dot sensitized solar cells (QDSSCs) are of interest for solar energy conversion because of their tunable band gap and promise of stable, low-cost performance. We have investigated the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state QDSSCs. CdS quantum dots ∼2 to ∼6 nm in diameter were grown on SAM-passivated planar or nanostructured TiO(2) surfaces by successive ionic layer adsorption and reaction (SILAR), and photovoltaic devices were fabricated with spiro-OMeTAD as the solid-state hole conductor.

ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors.

Growth characteristics of zinc sulfide thin films deposited from dialkylzinc and H(2)S reactants by the atomic layer deposition technique have been investigated by quantum chemical methods. The steady-state growth of the films was simulated by studying the reaction of the Zn precursor with the hydrogenated sulfur-terminated (111) surface of zincblende ZnS and then by investigating the chemisorption of hydrogen sulfide on the surface formed by the metal exposure. The behavior of the dissociatively chemisorbed Zn precursors on the growth surface is of particular significance for the film deposition process, since the film growth is limited by the Zn deposition step.