Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm.

This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime.

1 GHz electro-optical silicon-germanium modulator in the 5-9 µm wavelength range.

Spectroscopy in the mid-infrared (mid-IR) wavelength range is a key technique to detect and identify chemical and biological substances. In this context, the development of integrated optics systems paves the way for the realization of compact and cost-effective sensing systems. Among the required devices, an integrated electro-optical modulator (EOM) is a key element for advanced sensing circuits exploiting dual comb spectroscopy.

Boosting the SiN nonlinear photonic platform with transition metal dichalcogenide monolayers.

In the past few years, we have witnessed increased interest in the use of 2D materials to produce hybrid photonic nonlinear waveguides. Although graphene has attracted most of the attention, other families of 2D materials such as transition metal dichalcogenides have also shown promising nonlinear performance. In this work, we propose a strategy for designing silicon nitride waveguiding structures with embedded MoS for nonlinear applications.