High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm.

Compact single-chip VMUX/DEMUX on the silicon-on-insulator platform.

We demonstrate a compact, single-chip 40-channel, dense wavelength division multiplexing (DWDM) variable attenuator multi/demultiplexer (VMUX/DEMUX) by monolithic integration of an echelle grating and high-speed p-i-n VOA on the silicon-on-insulator (SOI) platform. The demonstrated device has a flat-top filter shape, on chip loss of 5.0 dB, low PDL of 0.

Thermally-efficient reconfigurable narrowband RF-photonic filter.

We present the design and fabrication of thermally-efficient tuning structures integrated into a narrowband reconfigurable radio-frequency (RF)-photonics filter using silicon-on-insulator waveguide optical delay lines. By introducing thermal isolation trenching, we are able to achieve IIR, FIR or arbitrary mixed response with less than 120 mW average tuning power in a single RF-photonic unit cell filter.

Optical proximity communication using reflective mirrors.

Optical proximity communication (OPxC) with reflecting mirrors is presented. Direct optical links are demonstrated for silicon chips with better than -2.5dB coupling loss, excluding surface losses.