Publications by authors named "Jonathan Backman"
2D semiconducting materials have immense potential for future electronics due to their atomically thin nature, which enables better scalability. While the channel scalability of 2D materials has been extensively studied, the current understanding of contact scaling in 2D devices is inconsistent and oversimplified. Here physically scaled contacts and asymmetrical contact measurements (ACMs) are combined to investigate the contact scaling behavior in 2D field-effect transistors.
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- Encapsulating single-layer 2D materials like MoS2 in hBN enhances their mobility, but the interactions between the semiconductor and surrounding dielectrics, particularly electron-phonon interactions, are still under investigation.
- This study conducts an ab initio analysis of MoS2-hBN devices, comparing two configurations: one with hBN as a non-vibrating insulator and another that integrates hBN in the analysis.
- Results show a 50% reduction in ON-state current compared to the best possible scenario, with explicit inclusion of hBN causing additional electron-phonon interactions and influencing temperature distribution within the transistor.