Understanding amorphization mechanisms using ion irradiation in situ a TEM and 3D damage reconstruction.

In this work, ion irradiations in-situ of a transmission electron microscope are performed on single-crystal germanium specimens with either xenon, krypton, argon, neon or helium. Using analysis of selected area diffraction patterns and a custom implementation of the Stopping and Range of Ions in Matter (SRIM) within MATLAB (which allows both the 3D reconstruction of the collision cascades and the calculation of the density of vacancies) the mechanisms behind amorphization are revealed. An intriguing finding regarding the threshold displacements per atom (dpa) required for amorphization results from this study: even though the heavier ions generate more displacements than lighter ions, it is observed that the threshold dpa for amorphization is lower for the krypton-irradiated specimens than for the xenon-irradiated ones.

Effect of density and Z-contrast on the visibility of noble gas precipitates and voids with insights from Monte-Carlo simulations.

In this work, a detailed analysis of He, Ne, Ar, Kr and Xe precipitates in a complex borosilicate glass using transmission electron microscopy (TEM) with in-situ ion implantation is presented. With in-situ monitoring, the real-time dynamics of precipitate and void evolution under ion implantation was followed. Using appropriate equations of state and, Monte-Carlo simulations to supplement the TEM images, we then discuss in detail the possibility and ways of differentiating the precipitates of various noble gases from empty voids.

Investigating Helium Bubble Nucleation and Growth through Simultaneous In-Situ Cryogenic, Ion Implantation, and Environmental Transmission Electron Microscopy.

Palladium can readily dissociate molecular hydrogen at its surface, and rapidly accept it onto the octahedral sites of its face-centered cubic crystal structure. This can include radioactive tritium. As tritium β-decays with a half-life of 12.

Ion-beam-induced bending of semiconductor nanowires.

The miniaturisation of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion beam-induced deformation effects.

Ion implantation in nanodiamonds: size effect and energy dependence.

Nanoparticles are ubiquitous in nature and are increasingly important for technology. They are subject to bombardment by ionizing radiation in a diverse range of environments. In particular, nanodiamonds represent a variety of nanoparticles of significant fundamental and applied interest.

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide.

Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces.

Reversible loss of Bernal stacking during the deformation of few-layer graphene in nanocomposites.

The deformation of nanocomposites containing graphene flakes with different numbers of layers has been investigated with the use of Raman spectroscopy. It has been found that there is a shift of the 2D band to lower wavenumber and that the rate of band shift per unit strain tends to decrease as the number of graphene layers increases. It has been demonstrated that band broadening takes place during tensile deformation for mono- and bilayer graphene but that band narrowing occurs when the number of graphene layers is more than two.