Atomic layer deposition of ruthenium films on strontium titanate.

Atomic layer deposition of ruthenium on SrTiO3 layers was investigated using (C2H5C5H4). (NC4H4)Ru and air as precursors. For comparison, the growth was studied also on ZrO2 films and SiO2/Si surfaces.

SiGe epitaxy on a 300 mm batch furnace.

This work reports the feasibility of silicon and silicon germanium epitaxy using an ASM A412(TMa) LPCVD all quartz, hot wall, vertical batch furnace reactor using 100 wafer product loads. The very same furnace can be used for 25 wafer and 200 wafer load size, without any hardware changes, dependant on production needs. Following this approach a significant cost reduction for epitaxy in 300 mm high volume manufacturing is possible and enables new applications.