A Unipolar Quantum Dot Diode Structure for Advanced Quantum Light Sources.

Triggered, indistinguishable single photons are crucial in various quantum photonic implementations. Here, we realize a novel n-i-n diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the charged states. Blinking-free single-photon emission and high two-photon indistinguishability are observed.

Two-photon interference in the telecom C-band after frequency conversion of photons from remote quantum emitters.

Efficient fibre-based long-distance quantum communication via quantum repeaters relies on deterministic single-photon sources at telecom wavelengths, potentially exploiting the existing world-wide infrastructures. For upscaling the experimental complexity in quantum networking, two-photon interference (TPI) of remote non-classical emitters in the low-loss telecom bands is of utmost importance. Several experiments have been conducted regarding TPI of distinct emitters, for example, using trapped atoms, ions, nitrogen vacancy centres, silicon vacancy centres, organic molecules and semiconductor quantum dots.