Thermal atomic layer etching (ALE) was demonstrated on ternary III-V compound semiconductors. In particular, thermal ALE on InGaAs and InAlAs was achieved with sequential, self-limiting fluorination and ligand-exchange reactions using hydrogen fluoride (HF) as the fluorination reactant and dimethylaluminum chloride (DMAC) as the ligand-exchange reactant. Thermal ALE was investigated on planar surfaces and three-dimensional nanostructures.
View Article and Find Full Text PDFWork presented here measures and interprets the electrical and thermal conductivities of atomic layer deposited (ALD) free-standing single film and periodic tungsten and aluminum oxide nanobridges with thicknesses from ∼5-20 nm and ∼3-13 nm, respectively. Electrical conductivity of the W films is reduced by up to 99% from bulk, while thermal conductivity is reduced by up to 91%. Results indicate phonon contribution to thermal conductivity is dominant in these ALD films and may be substantially reduced by the incorporation of periodicity in the ALD W/Al2O3 nanolaminates.
View Article and Find Full Text PDFGaN nanowires were coated with tungsten by means of atomic layer deposition. These structures were then adapted as probe tips for near-field scanning microwave microscopy. These probes displayed a capacitive resolution of ~0.
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