Effects of the Electrical Properties of SnO and C60 on the Carrier Transport Characteristics of p-i-n-Structured Semitransparent Perovskite Solar Cells.

Recently, metal halide perovskite-based top cells have shown significant potential for use in inexpensive and high-performance tandem solar cells. In state-of-the-art p-i-n perovskite/Si tandem devices, atomic-layer-deposited SnO has been widely used as a buffer layer in the top cells because it enables conformal, pinhole-free, and highly transparent buffer layer formation. In this work, the effects of various electrical properties of SnO and C60 layers on the carrier transport characteristics and the performance of the final devices were investigated using a numerical simulation method, which was established based on real experimental data to increase the validity of the model.