Oblique angle deposition is known for yielding the growth of columnar grains that are tilted in the direction of the deposition flux. Using this technique combined with high-power impulse magnetron sputtering (HiPIMS) can induce unique properties in ferromagnetic thin films. Earlier we have explored the properties of polycrystalline and epitaxially deposited permalloy thin films deposited under 35° tilt using HiPIMS and compared it with films deposited by dc magnetron sputtering (dcMS).
View Article and Find Full Text PDFMultilayer structures comprising of SiO/SiGe/SiO and containing SiGe nanoparticles were obtained by depositing SiO layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550-900 °C for 1 min) in N ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore structural changes and corresponding properties.
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