Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures.

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation.

Experimental realization of a new type of crystalline undulator.

A new scheme of making crystalline undulators was recently proposed and investigated theoretically by Andriy Kostyuk, concluding that a new type of crystalline undulator would be not only viable, but better than the previous scheme. This article describes the first experimental measurement of such a crystalline undulator, produced by using Si(1-x)Ge(x)-graded composition and measured at the Mainzer Microtron facility at beam energies of 600 and 855 MeV. We also present theoretical models developed to compare with the experimental data.

Auger-decay dynamics of germanium nano-islands in silicon.

The decay dynamics of self-assembled germanium islands is studied by time-resolved fluorescence spectroscopy. The scaling behavior of the decay rate with the number of excitons in the islands is shown to agree with expectations for an Auger-recombination-dominated process in the asymptotic limit of high exciton numbers. The multi-excitonic decay time and spectral behavior are compared to theoretical estimates.

Fibronectin adsorption, cell adhesion, and proliferation on nanostructured tantalum surfaces.

The interaction between dental pulp derived mesenchymal stem cells (DP-MSCs) and three different tantalum nanotopographies with and without a fibronectin coating is examined: sputter-coated tantalum surfaces with low surface roughness <0.2 nm, hut-nanostructured surfaces with a height of 2.9 +/- 0.