Reduction of charge impurities in a silicon metal-oxide-semiconductor quantum dot qubit device patterned with nano-imprint lithography.

The silicon metal-oxide-semiconductor quantum dot architecture is a leading approach for the physical implementation of semiconductor quantum computing. One major challenge for scalable quantum dots is the presence of charge impurities. Electron-beam lithography (EBL), almost universally used to fabricate quantum dot devices, is known to create such defects at the Si/SiO interface.