Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking.

In this work, the design of a wideband low-noise amplifier (LNA) using a resistive feedback network is proposed for potential multi-band sensing, communication, and radar applications. For achieving wide operational bandwidth and flat in-band characteristics simultaneously, the proposed LNA employs a variety of circuit design techniques, including a voltage-current (shunt-shunt) negative feedback configuration, inductive emitter degeneration, a main branch with an added cascode stage, and the shunt-peaking technique. The use of a feedback network and emitter degeneration provides broadened transfer characteristics for multi-octave coverage and a real impedance for input matching, respectively.

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits.

It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. In the present work, we demonstrate how radiation hardening by design (RHBD) techniques utilized in DC bias blocks only (current mirrors) can also improve the SET response in AC signal paths of switching circuits (e.g.

Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics.

Pulsed-laser testing is an attractive tool for studying space-based radiation effects in microelectronics because it provides a high degree of spatial resolution and is more cost-effective than conventional accelerator-based testing. However, quantitatively predicting the effects of radiation is challenging for this optical method. A new approach to pulsed-laser testing is presented, which addresses these challenges by using a Bessel beam and carrier generation via two-photon absorption.

Record maximum oscillation frequency in C-face epitaxial graphene transistors.

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene.