Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain.

A graphene-based three-terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field-effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal-insulator gate structure to modulate the device currents.

Influences on Plasmon Resonance Linewidth in Metal-Insulator-Metal Structures Obtained via Colloidal Self-Assembly.

Localized surface plasmon resonances (LSPRs) have been widely explored in various research fields because of their excellent ability to condense light into a nanometer scale volume. However, it suffers quite often from the broadening of the LSPR linewidths, resulting in low quality factors. Among the causes of the broadening, fabrication inaccuracies are crucial yet challenging to evaluate.