Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots.

III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs for temperatures ranging from 5 to 300 K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of g(0) = 0.