Measuring refractive index using the focal displacement method.

A simple technique is introduced for measuring the refractive index of plane-parallel samples having thickness of the order of a millimeter. The refractive index values are reported for six bulk semiconductors, each index measured at two infrared wavelengths using this method. The values are found to be within a few percent of those in literature for four semiconductors.

Wavelength dependence of two photon and free carrier absorptions in InP.

Nonlinear absorption at 1.064 and 1.535 microm wavelengths by two photon and free carrier absorption processes in undoped and Fe doped InP has been investigated.