Anisotropy of radiation-induced defects in Yb-implanted β-GaO.

RE-doped β-GaO seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-GaO, which is crucial for device manufacturing. Using the RBS/c technique, we have carefully studied the structural changes caused by implantation and post-implantation annealing in two of the most commonly used crystallographic orientations of β-GaO, namely the (-201) and (010).