Design of a broadband GeSi electro-absorption modulator based on the Franz-Keldysh effect with thermal tuning.

We present the design of an adiabatic taper coupled GeSi electro-absorption modulator, which is based on Franz-Keldysh effect. The device has an active region of 0.8×50 µm, an extinction ratio of more than 6 dB and an insertion loss less than 3 dB at the wavelength of 1550 nm.

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm.

36 GHz submicron silicon waveguide germanium photodetector.

We present two effective approaches to improve the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25 μm silicon-on-insulator (SOI) platform. The main cause of poor responsivity is identified as metal absorption from the top contact to Ge.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.

We present the design and fabrication of a waveguide-based Ge electro-absorption (EA) modulator integrated with a 3 µm silicon-on-isolator (SOI) waveguide. The proposed Ge EA modulator employs a butt-coupled horizontally-oriented p-i-n structure. The optical design achieves a low-loss transition from Ge to Si waveguides.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.

Compact single-chip VMUX/DEMUX on the silicon-on-insulator platform.

We demonstrate a compact, single-chip 40-channel, dense wavelength division multiplexing (DWDM) variable attenuator multi/demultiplexer (VMUX/DEMUX) by monolithic integration of an echelle grating and high-speed p-i-n VOA on the silicon-on-insulator (SOI) platform. The demonstrated device has a flat-top filter shape, on chip loss of 5.0 dB, low PDL of 0.

Low loss shallow-ridge silicon waveguides.

We demonstrate low loss shallow-ridge silicon waveguides with an average propagation loss of 0.274 + or - 0.008 dB/cm in the C-band (1530 nm - 1565 nm).