Thermal and plasma-enhanced atomic layer deposition of TiN using TDMAT and NH3 on particles agitated in a rotary reactor.

Titanium nitride (TiN) shows metallic-type electrical behavior and is therefore an interesting material to improve the conductivity of a wide variety of powders. Atomic layer deposition (ALD) is an excellent technique for achieving the desired ultrathin but conformal coatings. To conformally coat large amounts of particles using ALD, agitation of the particles and efficient reactant usage are necessary.