Thermally tunable anti-ambipolar heterojunction devices.

Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer AsP and PdSe, we have constructed an anti-ambipolar heterojunction device.

High-Speed Optoelectronic Nonvolatile Memory Based on van der Waals Heterostructures.

High-performance optoelectronic nonvolatile memory is promising candidate for next-generation information memory devices. Here, a floating-gate memory is constructed based on van der Waals heterostructure, which exhibits a large storage window ratio (≈75.5%) and an extremely high on/off ratio (10 ), as well as an ultrafast electrical writing/erasing speed (40 ns).

An anomalous Hall effect in edge-bonded monolayer graphene.

An anomalous Hall effect (AHE) is usually presumed to be absent in pristine graphene due to its diamagnetism. In this work, we report that a gate-tunable Hall resistance can be obtained in edge-bonded monolayer graphene without an external magnetic field. In a perpendicular magnetic field, consists of a sum of two terms: one from the ordinary Hall effect and the other from the AHE ().

electrochemical polymerization of aniline on flexible conductive substrates for supercapacitors and non-enzymatic ascorbic acid sensors.

Polyaniline, as a kind of conductive polymer with commercial application prospects, is still under researches in its synthesis and applications. In this work, polyaniline was fabricated on flexible substrates including carbon cloths and polyethylene naphthalate byelectropolymerization method. The synthesized flexible electrodes were characterized by scanning electron microscopy, High resolution transmission electron microscope, atomic force microscope, Fourier transform infrared, x-ray diffraction, and x-ray photoelectron spectroscopy.

Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals.

Memory devices based on lead halide perovskite have attracted great interests because of their unique current-voltage hysteresis. However, current memory devices based on polycrystalline perovskites usually suffer from large intrinsic electronic current and parasitic leakage current due to the existence of grain boundaries, which further leads to high power consumption. Here, a low-power resistance switching random-access memory device is demonstrated by assembling single-crystalline CsPbBr on Ag electrodes.