Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS Transistor Operating in Subthreshold Regime.

In this work, we report an n-type metal-oxide-semiconductor (nMOS) inverter using chemical vapor deposition (CVD)-grown monolayer WS field-effect transistors (FETs). Our large-area CVD-grown monolayer WS FETs exhibit outstanding electrical properties including a high on/off ratio, small subthreshold swing, and excellent drain-induced barrier lowering. These are achieved by n-type doping using AlO/AlO and a double-gate structure employing high- dielectric HfO.