Thin film ferroelectric photonic-electronic memory.

To reduce system complexity and bridge the interface between electronic and photonic circuits, there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However, practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration. Here, we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator.

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects.

Along with deep scaling transistors and complex electronics information exchange networks, very-large-scale-integrated (VLSI) circuits require high performance and ultra-low power consumption. In order to meet the demand of data-abundant workloads and their energy efficiency, improving only the transistor performance would not be sufficient. Super high-speed microprocessors are useless if the capacity of the data lines is not increased accordingly.

Energy-efficient non-volatile ferroelectric based electrostatic doping multilevel optical readout memory.

Non-volatile multilevel optical memory is an urgent needed artificial component in neuromorphic computing. In this paper, based on ferroelectric based electrostatic doping (Fe-ED) and optical readout due to plasma dispersion effect, we propose an electrically programmable, multi-level non-volatile photonics memory cell, which can be fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. HfZrO (HZO) film is chosen as the ferroelectric ED layer and combines with polysilicon layers for an enhanced amplitude modulation between the carrier accumulation and the confined optical field.

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications.

GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys.

ZrO Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior.

Here we report the ZrO-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles.

Low Voltage Operating 2D MoS Ferroelectric Memory Transistor with HfZrO Gate Structure.

Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage.

Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances.

We demonstrate the negative capacitance (NC) effect of HfZrO-based field-effect transistors (FETs) in the experiments. Improved I, SS, and G of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with different passivation time are equivalent to the NC devices with different MOS capacitances.