The Impact of Substrate Temperature on the Adhesion Strength of Electroplated Copper on an Al-Doped ZnO/Si System.

This research, which involved a comprehensive methodology, including depositing electroplated copper on a copper seed layer and Al-doped ZnO (AZO) thin films on textured silicon substrates using DC magnetron sputtering with varying substrate heating, has yielded significant findings. The study thoroughly investigated the effects of substrate temperature (Ts) on copper adhesion strength and morphology using the peel force test and electron microscopy. The peel force test was conducted at angles of 90°, 135°, and 180°.

Pressure Welding of Silver Nanowires Networks at Room Temperature as Transparent Electrodes for Efficient Organic Light-Emitting Diodes.

In this work, polymethylmethacrylate (PMMA) as a superior mediate for the pressure welding of silver nanowires (Ag NWs) networks as transparent electrodes without any thermal treatment is demonstrated. After a pressing of 200 kg cm , not only the sheet resistance but also the surface roughness of the PMMA-mediated Ag NWs networks decreases from 2.6 kΩ sq to 34.

Ta and Ru Seed Layers Effect on the Crystallinity and Wettability of CoFeV Films.

The following structures are deposited under the conditions (a) glass/Ru(X nm)/Co60Fe20V20(5 nm) and (b) glass/Ta(Y nm)/Co60Fe20V20(5 nm) at room temperature (RT), where X and Y is from 5 nm to 10 nm. X-ray diffraction (XRD) patterns of glass/Ru(X nm)/Co60Fe20V20(5 nm) and glass/Ta(Y nm)/Co60Fe20V20(5 nm) reveal a weak crystallization at peak β-(200) as the thicknesses of Ta increase from 8 nm to 10 nm, and the patterns indicate an amorphous state as the thicknesses of all Ru films and Ta thicknesses increase from 5 nm to 7 nm. The average contact angles of glass/Ru(X nm)/Co60Fe20V20(5 nm) and glass/Ta(Y nm)/Co60Fe20V20(5 nm) are less than 90° with testing liquids deionized (DI) water and glycerol.

Tunable multilevel storage of complementary resistive switching on single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering.

Tunable multilevel storage of complementary resistive switching (CRS) on single-step formation of ZnO/ZnWOx bilayer structure via interfacial engineering was demonstrated for the first time. In addition, the performance of the ZnO/ZnWOx-based CRS device with the voltage- and current-sweep modes was demonstrated and investigated in detail. The resistance switching behaviors of the ZnO/ZnWOx bilayer ReRAM with adjustable RESET-stop voltages was explained using an electrochemical redox reaction model whose electron-hopping activation energies of 28, 40, and 133 meV can be obtained from Arrhenius equation at RESET-stop voltages of 1.