Optical characterization of inhomogeneity of polymer-like thin films arising in the initial phase of plasma-enhanced chemical vapor deposition.

In this study, an optical investigation in a wide spectral range of polymer-like (SiOCH) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) is presented. The primary focus is on assessing the homogeneity of the grown films. Within the PECVD, it is possible to alter the properties of the deposited material by continually adjusting deposition process parameters and hence allow for the growth of inhomogeneous layers.

Optical characterization of inhomogeneous thin films with randomly rough boundaries exhibiting wide intervals of spatial frequencies.

Results concerning the optical characterization of two inhomogeneous polymer-like thin films deposited by the plasma enhanced chemical vapor deposition onto silicon single crystal substrates are presented. One of these films is deposited onto a smooth silicon surface while the latter film is deposited on a randomly rough silicon surface with a wide interval of spatial frequencies. A combination of variable-angle spectroscopic ellipsometry and spectroscopic reflectometry applied at near-normal incidence are utilized for characterizing both the films.

Optical characterization of inhomogeneous thin films with randomly rough boundaries.

An inhomogeneous polymer-like thin film was deposited by the plasma enhanced chemical vapor deposition onto silicon single-crystal substrate whose surface was roughened by anodic oxidation. The inhomogeneous thin film with randomly rough boundaries was created as a result. This sample was studied using the variable-angle spectroscopic ellipsometry and spectroscopic reflectometry.

Ellipsometric characterization of inhomogeneous thin films with complicated thickness non-uniformity: application to inhomogeneous polymer-like thin films.

The method of variable angle spectroscopic ellipsometry usable for the complete optical characterization of inhomogeneous thin films exhibiting complicated thickness non-uniformity together with transition layers at their lower boundaries is presented in this paper. The inhomogeneity of these films is described by means of the multiple-beam interference model. The thickness non-uniformity is taken into account by averaging the elements of the Mueller matrix along the area of the light spot of the ellipsometer on the films.

Ellipsometric characterization of highly non-uniform thin films with the shape of thickness non-uniformity modeled by polynomials.

A common approach to non-uniformity is to assume that the local thicknesses inside the light spot are distributed according to a certain distribution, such as the uniform distribution or the Wigner semicircle distribution. A model considered in this work uses a different approach in which the local thicknesses are given by a polynomial in the coordinates x and y along the surface of the film. An approach using the Gaussian quadrature is very efficient for including the influence of the non-uniformity on the measured ellipsometric quantities.

Spectroscopic ellipsometry of inhomogeneous thin films exhibiting thickness non-uniformity and transition layers.

In this paper the complete optical characterization of an inhomogeneous polymer-like thin film of SiOCH exhibiting a thickness non-uniformity and transition layer at the boundary between the silicon substrate and this film is performed using variable angle spectroscopic ellipsometry. The Campi-Coriasso dispersion model was utilized for describing the spectral dependencies of the optical constants of the SiOCH thin film and transition layer. The multiple-beam interference model was used for expressing inhomogeneity of the SiOCH thin film.