Ultrathin InOthin-film transistors deposited from trimethylindium and ozone.

Indium oxide (InO) is a promising channel material for thin-film transistors (TFTs). In this work, we develop an atomic layer deposition (ALD) process of using trimethylindium and ozone (O) to deposit InOfilms and fabricate ultrathin InOTFTs. The InOTFTs with 4 nm channel thickness show generally good switching characteristics with a high/of 10, a high mobility () of 16.

Ultra-thin gate insulator of atomic-layer-deposited AlOand HfOfor amorphous InGaZnO thin-film transistors.

To strengthen the downscaling potential of top-gate amorphous oxide semiconductor (AOS) thin-film transistors (TFTs), the ultra-thin gate insulator (GI) was comparatively implemented using the atomic-layer-deposited (ALD) AlOand HfO. Both kinds of high-GIs exhibit good insulating properties even with the physical thickness thinning to 4 nm. Compared to the amorphous indium-gallium-zinc oxide (a-IGZO) TFTs with 4 nm AlOGI, the 4 nm HfOenables a larger GI capacitance, while the HfO-gated TFT suffers higher gate leakage current and poorer subthreshold slope, respectively originating from the inherently small band offset and the highly defective interface between a-IGZO and HfO.

x-ray photoelectron spectroscopy analysis of the atomic layer deposition of AlOon SiO/Si: Interface dipole and persistent surface groups.

Atomic layer deposition (ALD) has become an essential technology in many areas. To better develop and use this technology, it is of the pivot to understand the surface chemistry during the ALD film growth. The growth of an ALD oxide film may also induce an electric dipole at the interface, which may be further tuned to modulate the flat band voltage for electronic device applications.