One-Step Synthesis of Transition Metal Dichalcogenide Quantum Dots Using Only Alcohol Solvents for Indoor-Light Photocatalytic Antibacterial Activity.

In this study, we report a one-step direct synthesis of molybdenum disulfide (MoS) and tungsten disulfide (WS) quantum dots (QDs) through a solvothermal reaction using only alcohol solvents and efficient () decompositions as photocatalytic antibacterial agents under visible light irradiation. The solvothermal reaction gives the scission of molybdenum-sulfur (Mo-S) and tungsten-sulfur (W-S) bonding during the synthesis of MoS and WS QDs. Using only alcohol solvent does not require a residue purification process necessary for metal intercalation.

Analysis of Interface Phenomena for High-Performance Dual-Stacked Oxide Thin-Film Transistors via Equivalent Circuit Modeling.

Oxide thin-film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, oxide semiconductors (OSs) have been developed as active layers of TFTs. Among them, indium-gallium-zinc oxide (IGZO) is actively used in the organic light-emitting diode display field.

The effect of surface energy characterized functional groups of self-assembled monolayers for enhancing the electrical stability of oxide semiconductor thin film transistors.

The exact direction of the surface energy characterized functional groups of self-assembled monolayers (SAMs) is proposed for achieving enhanced electrical stability of indium gallium zinc oxide (IGZO) semiconductor thin film transistors (TFTs). The SAM treatment, particularly with the SAM functional group having lower surface energy, makes it difficult to adsorb oxygen molecules difficult onto IGZO. Such an effect greatly improves the positive bias stability (PBS) and clockwise hysteresis stability.

The effect of Surface energy characterized functional group of self-assembled monolayer for enhancing electrical stability of oxide semiconductor thin film transistor.

The exact direction, of the surface energy characterized functional group of self-assembled monolayer (SAM), is proposed for achieving the enhanced electrical stability of indium gallium zinc oxide (IGZO) semiconductor thin film transistor (TFT). The SAM treatment, particularly at the SAM functional group having lower surface energy, makes oxygen molecules difficult to be adsorbed onto IGZO. And such an effect much improves positive bias stability (PBS) and clockwise hysteresis stability to the same tendency.

Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors.

We present an atmospheric-pressure plasma (APP) treatment technique to improve the electrical performance of solution-processed dielectric films. This technique can successfully reduce leakage current and frequency dependence of solution-processed dielectric films. The APP treatment contributes to the conversion of metal hydroxide to metal oxide, and in the case of a solution-treated AlO dielectric thin film, it effectively ascribes to the formation of high-quality AlO dielectric thin films.

Solution-Grown Homojunction Oxide Thin-Film Transistors.

Growing attention has been given to low temperature, solution-processed metal oxide thin-film transistors because they can be applied in the emerging sector of flexible and large-scale electronics. However, major obstacles of solution-grown devices, such as their relatively low field-effect mobility and the difficulty of controlling carrier concentration, limit the further advancement of the electronics. Here, we overcome these constraints through a newly renovated structure, called a "homojunction", consisting of double-stacked semiconductors with same material.

Effective Atmospheric-Pressure Plasma Treatment toward High-Performance Solution-Processed Oxide Thin-Film Transistors.

Solution-processed oxide semiconductors (OSs) have attracted much attention because they can simply, quickly, and cheaply produce transparent channels on flexible substrates. However, despite such advantages, in the fabrication process of OS thin-film transistors (TFTs) using the solution process, it is a fatal problem that there are hardly any ways to simply and effectively control important TFT parameters, including the turn-on voltage ( V) and on/off current ratio. For the practical application of solution-processed OS TFT, approaches to simply and effectively control the parameters are urgently required.

Comparison of long-term oncological outcomes of appendiceal cancer and colon cancer: A multicenter retrospective study.

Background: There has been no comparative study of the long-term oncological outcomes of appendiceal cancer and colon cancer. We hypothesized that the oncological outcome is worse in appendiceal cancer because perforation is more frequent than in colon cancer.

Methods: Patients with stage I-III were selected from 5046 patients with appendiceal or colon cancer, between September 2001 and June 2010.

Acid-free and oxone oxidant-assisted solvothermal synthesis of graphene quantum dots using various natural carbon materials as resources.

To prepare carbon-based fluorescent materials such as graphene quantum dots (GQDs), new and effective methods are needed to convert one-dimensional (1D) or two-dimensional (2D) carbon materials to 0D GQDs. Here, we report a novel acid-free and oxone oxidant-assisted solvothermal synthesis of GQDs using various natural carbon resources including graphite (G), multiwall carbon nanotubes (M), carbon fibers (CF), and charcoal (C). This acid-free method, not requiring the neutralization process of strong acids, exhibits a simple and eco-friendly purification process and also represents a recycling production process, together with mass production and high yield.

Mass production of graphene quantum dots by one-pot synthesis directly from graphite in high yield.

One of the most efficient and straightforward methods for production of graphene quantum dots (GQDs) could be their direct preparation from graphite powder by one-pot synthesis using high-powered microwave irradiation. It is believed that in this way, graphite can be multiply broken by repeated redox reactions, which leads to a high yield and mass production.