Characterization of Spatial Distribution of Trap Across the Substrate in Metal-Insulator-Semiconductor Structure with Band Bending Effect.

We report the technique of trap distribution extraction according to the vertical position of the substrate in the -MOSFET. This study was conducted on a single device. This technique is an experimental method.

Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in InGaAs Metal-Oxide-Semiconductor Field-Effect Transistors.

We report an experimental characterization of the interface states (()) by using the subthreshold drain current with optical charge pumping effect in InGaAs metal-oxide-semiconductor fieldeffect transistors (MOSFETs). The interface states are derived from the difference between the dark and photo states of the current-voltage characteristics. We used a sub-bandgap photon (i.