Lateral GeSn p-i-n photodetectors on insulator prepared by the rapid melting growth method.

In this work, GeSn lateral p-i-n photodetectors (PDs) on insulator were fabricated with an active GeSn layer grown by the rapid melting growth (RMG) method. Taking advantages of the defect-free GeSn strips, GeSn PDs with 5.3 Sn content have low dark current and high responsivities, which are about 0.

Sn component gradient GeSn photodetector with 3 dB bandwidth over 50 GHz for extending L band telecommunication.

In this work, high-performance GeSn photodetectors with a Sn content gradient GeSn layer were fabricated on SOI substrate by CMOS-compatible process for C and L band telecommunication. The active GeSn layer has a Sn component increased from 9 to 10.7% with the controlled relaxation degree up to 84%.

Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform.

In this paper, a carrier-injection electro-absorption modulator (EAM) at 2 µm is demonstrated on Ge-on-Si platform. The EAM shows a compact size and high modulation efficiency due to the strong free-carrier electroabsorption (FCEA) effect in Ge. A modulation depth of 40 dB can be obtained under the injection current of only 420 mA.