Effects of Plasma Damage Removal on Direct Contact Resistance and Hot-Electron-Induced Punch Through (HEIP) of PMOSFETs.

In order to reduce contact resistance of the source/drain region in nanoscale devices, it is essential to overcome the increasing leakage and hot-electron-induced punch through (HEIP) degradation. In this paper, we propose a simple Si soft treatment technique immediately after direct contact (DC) etching to reduce and minimize HEIP degradation. We found by analysis with a transmission electron microscope, that 10 s of treatment reduced the plasma damaged layer by 19%, which resulted in 10.

Catalyzed Atomic Layer Deposition of Silicon Oxide at Ultralow Temperature Using Alkylamine.

We report the catalyzed atomic layer deposition (ALD) of silicon oxide using SiCl, HO, and various alkylamines. The density functional theory (DFT) calculations using the periodic slab model of the SiO surface were performed for the selection of alternative Lewis base catalysts with high catalytic activities. During the first half-reaction, the catalysts with less steric hindrance such as pyridine would be more effective than bulky alkylamines despite lower nucleophilicity.

Field testing primary stabbing headache criteria according to the 3rd beta edition of International Classification of Headache Disorders: a clinic-based study.

Background: The diagnostic criteria for primary stabbing headache (PSH) in the 3rd beta edition of International Classification of Headache Disorders (ICDH-3 beta) were recently revised. In the ICDH-3 beta, PSH is defined as short-lasting head pain spontaneous occurring as a single stab or series of stabs without autonomic symptoms and involving all head areas (i.e.