Innovation (Camb)
November 2022
Dirac semimetal is a phase of matter whose elementary excitation is described by the relativistic Dirac equation. In the limit of zero mass, its parity-time symmetry enforces the Dirac fermion in the momentum space, which is composed of two Weyl fermions with opposite chirality, to be non-chiral. Inspired by the flavor symmetry in particle physics, we theoretically propose a massless Dirac-like equation yet linking two Weyl fields with the identical chirality by assuming isospin symmetry, independent of the space-time rotation exchanging the two fields.
View Article and Find Full Text PDFThe magnetic phase diagram of the two-dimensional van der Waals magnet CrPSand the exchange bias effect of CrPSin contact with NiFe film have been investigated. Based on the magnetic measurements, we figure out the relatively low spin-flop field and spin-flip field for CrPS, both of the spin transition phenomena are strongly affected by the temperature. The perpendicular exchange bias effect is studied in CrPSsingle-crystal flake covered with 5 nm NiFe.
View Article and Find Full Text PDFBackground: Glutaminase (GLS), the key enzyme that catalyzes glutamine catabolism, facilitates the production of energy, building blocks, and factors resisting stresses. Two isoforms of GLS have been identified: GLS1 and GLS2. Elevated GLS1 contributes to tumorigenesis and tumor progression.
View Article and Find Full Text PDFValleytronics is a promising paradigm to explore the emergent degree of freedom for charge carriers on the energy band edges. Using ab initio calculations, we reveal that the honeycomb boron nitride (h-BN) monolayer shows a pair of inequivalent valleys in the vicinities of the vertices of hexagonal Brillouin zone even without the protection of the C symmetry. The inequivalent valleys give rise to a 2-fold degree of freedom named the valley pseudospin.
View Article and Find Full Text PDFNdFeB/α-Fe nanocomposite magnets are prepared through electron beam exposure with a greatly reduced annealing time of 0.1 s. This is by far the most effective approach due to the effect of an extremely high heating rate featuring a rapid thermal process.
View Article and Find Full Text PDFStability is an important issue for the application of resistive switching (RS) devices. In this work, the endurance and retention properties of Ag/CoO/Ag interface-type RS device were investigated. This device exhibits rectifying I-V curve, multilevel storage states and retention decay behavior, which are all related to the Schottky barrier at the interface.
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