The diverse technical choices during the implantation of the totally implantable venous access ports: A review.

Although the implantation of the totally implantable venous access ports globally is increasingly sophisticated, there is still a dearth of absolute standardization in the technical choice of each surgical step, with numerous technologies demonstrating significant applicability. This review comprehensively summarizes the diverse choices of implantation procedural techniques related to the pocket location, vein access, port specification, catheterization method, puncture guidance, single-incision technique, catheter tip positioning method, port fixation, skin closure, and first-use period. The aim is to provide surgeons with alternative options when they encounter different problems in each procedure due to the diverse clinical characteristics of patients during venous port implantation.

Application of pocket-first technique for implantation of totally implantable venous access ports.

Background: While vascular puncture is always performed before making port pocket in the implantation of totally implantable venous access ports (TIVAP), some surgeons preferred to make port pocket first. This study seeks to verify the safety and feasibility for the pocket-first technique.

Methods: The study retrospectively reviewed 447 patients who undergone TIVAP implantation from July 2017 to November 2022.

Pred-SF: A Precipitation Prediction Model Based on Deep Neural Networks.

How to predict precipitation accurately and efficiently is the key and difficult problem in the field of weather forecasting. At present, we can obtain accurate meteorological data through many high-precision weather sensors and use them to forecast precipitation. However, the common numerical weather forecasting methods and radar echo extrapolation methods have insurmountable defects.

Association between Immunohistochemistry Markers and Tumor Features and Their Diagnostic and Prognostic Values in Intrahepatic Cholangiocarcinoma.

This study investigated the expression of some frequently used immunohistochemistry (IHC) markers. Besides, we evaluated their correlations with the clinical features and outcomes of intrahepatic cholangiocarcinoma (ICC). Patients who underwent surgical removal of the ICC tumors were followed up for 4 years.

Arterial resection and reconstruction in pancreatectomy: surgical technique and outcomes.

Background: The outcomes in patients with pancreatic or ampulla tumors remain unsatisfactory, especially with invasion into the hepatic artery (HA) or the superior mesenteric artery (SMA). In this setting, pancreatectomy combined with arterial resection and reconstruction may offer the possibility of an en-block resection with negative margins and acceptable morbidity and mortality.

Methods: A six year retrospective review of pancreatectomies performed at our institution, included 21 patients that underwent a pancreatectomy combined with arterial resection and reconstruction.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit.

Chelerythrine ameliorates acute cardiac allograft rejection in mice.

The improvement in graft survival over the past decade has been mainly due to calcineurin inhibitors, which interfere with the calcium-mediated pathway. Recently, other pathways such as those mediated by protein kinase C (PKC) are coming into view. The purpose of this study was to assess the immunosuppressive properties of chelerythrine, a specific PKC inhibitor, in preventing acute rejection in murine heterotopic heart transplantation.

Electrical Properties and Interfacial Studies of HfTiO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates.

In this research, the hafnium titanate oxide thin films, TiHfO₂, with titanium contents of = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C.