Simplified numerical modeling for Fano interference-induced asymmetric light reflectance effect using equivalent medium theory.

Localized surface plasmons exhibit promising capabilities in optoelectronic devices. In most cases, the metal nanoparticle arrays are located on interfaces or inside optical cavities. Fano interferences have been observed and explained via the interference between the waves generated by the localized surface plasmon and dielectric interfaces.

Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping.

Quantum states and arrangement of valence levels determine most of the electronic and optical properties of semiconductors. Since the crystal field split-off hole (CH) band is the top valence band in high-Al-content AlGaN, TM-polarized optical anisotropy has become the limiting factor for efficient deep-ultraviolet (DUV) light emission. Additional potentials, including on-site Coulomb interaction and orbital state coupling induced by magnesium (Mg) doping, are proposed in this work to regulate the valence level arrangement of AlN/AlGaN quantum wells (QWs).

Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED.

A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations.

Dual-Mode Plasmonic Coupling-Enhanced Color Conversion of Inorganic CsPbBr Perovskite Quantum Dot Films.

Plasmonic coupling has been demonstrated to be an effective manipulation strategy for emission enhancement in low-dimensional semiconductor materials. Here, dual-mode plasmonic resonances based on a metal dimer structure were proposed to simultaneously enhance the absorption under short-wavelength excitation and excitons' emission at longer wavelengths for CsPbBr perovskite quantum dots (QDs). Large-area metal nanodimer arrays with well-controlled local surface plasmon resonance were facilely fabricated by a simple method combined with metal angular deposition and nanosphere lithography.

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes.

As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200-280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures.

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density.

Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density.

Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling.

AlGaN has attracted considerable interest for ultraviolet (UV) applications. With the development of UV optoelectronic devices, abnormal carrier confinement behaviour has been observed for -plane-oriented AlGaN quantum wells (QWs) with high Al content. Because of the dispersive crystal field split-off hole band (CH band) composed of orbitals, the abnormal confinement becomes the limiting factor for efficient UV light emission.

Localized surface plasmon enhanced GaO solar blind photodetectors.

Enhancement in the light interaction between plasmonic nanoparticles (NPs) and semiconductors is a promising way to enhance the performance of optoelectronic devices beyond the conventional limit. In this work, we demonstrated improved performance of GaO solar-blind photodetectors (PDs) by the decoration of Rh metal nanoparticles (NPs). Integrated with Rh NPs on oxidized GaO surface, the resultant device exhibits a reduced dark current of about 10 pA, an obvious enhancement in peak responsivity of 2.

Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.

Despite intensive research on improvement in electrical performances of ZnO-based thin-film transistors (TFTs), the instability issues have limited their applications for complementary electronics. Herein, we have investigated the effect of nitrogen and hydrogen (N/H) codoping on the electrical performance and reliability of amorphous InGaZnO (α-IGZO) TFTs. The performance and bias stress stability of α-IGZO device were simultaneously improved by N/H plasma treatment with a high field-effect mobility of 45.

Transparent megahertz circuits from solution-processed composite thin films.

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass.

Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.

The intriguing properties of zinc oxide-based semiconductors are being extensively studied as they are attractive alternatives to current silicon-based semiconductors for applications in transparent and flexible electronics. Although they have promising properties, significant improvements on performance and electrical reliability of ZnO-based thin film transistors (TFTs) should be achieved before they can be applied widely in practical applications. This work demonstrates a rational and elegant design of TFT, composed of poly crystalline ZnO:H/ZnO bilayer structure without using other metal elements for doping.

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

Hydrogenation is one of the effective methods for improving the performance of ZnO thin film transistors (TFTs), which originate from the fact that hydrogen (H) acts as a defect passivator and a shallow n-type dopant in ZnO materials. However, passivation accompanied by an excessive H doping of the channel region of a ZnO TFT is undesirable because high carrier density leads to negative threshold voltages. Herein, we report that Mg/H codoping could overcome the trade-off between performance and reliability in the ZnO TFTs.

Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation.

A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2 , and multilayered samples are less susceptible than monolayer ones.

Hydrogen gas sensor based on metal oxide nanoparticles decorated graphene transistor.

In this work, in order to enhance the performance of graphene gas sensors, graphene and metal oxide nanoparticles (NPs) are combined to be utilized for high selectivity and fast response gas detection. Whether at the relatively optimal temperature or even room temperature, our gas sensors based on graphene transistors, decorated with SnO2 NPs, exhibit fast response and short recovery times (∼1 seconds) at 50 °C when the hydrogen concentration is 100 ppm. Specifically, X-ray photoelectron spectroscopy and conductive atomic force microscopy are employed to explore the interface properties between graphene and SnO2 NPs.

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown.

Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics.

Charge trapping layers are formed from different metallic nanocrystals in MoS2 -based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10(5) and a long retention time of 10 years.

Interface engineering for high-performance top-gated MoS2 field-effect transistors.

Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date.

High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability.

High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(-2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power.

Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons.

We report localised-surface-plasmon (LSP) enhanced deep-ultraviolet light-emitting diodes (deep-UV LEDs) using Al nanoparticles for LSP coupling. Polygonal Al nanoparticles were fabricated on the top surfaces of the deep-UV LEDs using the oblique-angle deposition method. Both the top- and bottom-emission electroluminescence of deep-UV LEDs with 279 nm multiple-quantum-well emissions can be effectively enhanced by the coupling with the LSP generated in the Al nanoparticles.

High Mg effective incorporation in Al-rich AlxGa1 - xN by periodic repetition of ultimate V/III ratio conditions.

According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in AlxGa1 - xN bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on AlxGa1 - xN surface. In addition, the N-rich growth atmosphere can also be favorable to Mg incorporation on the surface by changing the chemical potentials.

The InN epitaxy via controlling In bilayer.

The method of In bilayer pre-deposition and penetrated nitridation had been proposed, which had been proven to have many advantages theoretically. To study the growth behavior of this method experimentally, various pulse times of trimethylindium supply were used to get the optimal indium bilayer controlling by metalorganic vapour phase epitaxy. The results revealed that the InN film quality became better as the thickness of the top indium atomic layers was close to bilayer.

Rational design of sub-parts per million specific gas sensors array based on metal nanoparticles decorated nanowire enhancement-mode transistors.

"One key to one lock" hybrid sensor configuration is rationally designed and demonstrated as a direct effective route for the target-gas-specific, highly sensitive, and promptly responsive chemical gas sensing for room temperature operation in a complex ambient background. The design concept is based on three criteria: (i) quasi-one-dimensional metal oxide nanostructures as the sensing platform which exhibits good electron mobility and chemical and thermal stability; (ii) deep enhancement-mode field-effect transistors (E-mode FETs) with appropriate threshold voltages to suppress the nonspecific sensitivity to all gases (decouple the selectivity and sensitivity away from nanowires); (iii) metal nanoparticle decoration onto the nanostructure surface to introduce the gas specific selectivity and sensitivity to the sensing platform. In this work, using Mg-doped In2O3 nanowire E-mode FET sensor arrays decorated with various discrete metal nanoparticles (i.

Effect of the surface-plasmon-exciton coupling and charge transfer process on the photoluminescence of metal-semiconductor nanostructures.

The effect of direct metal coating on the photoluminescence (PL) properties of ZnO nanorods (NRs) has been investigated in detail in this work. The direct coating of Ag nanoparticles (NPs) induces remarkable enhancement of the surface exciton (SX) emissions from the ZnO NRs. Meanwhile, the charge transfer process between ZnO and Ag also leads to notable increment of blue and violet emissions from Zn interstitial defects.

Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs.