High-Q and high finesse silicon microring resonator.

We demonstrate the design, fabrication, and experimental characterization of a single transverse mode adiabatic microring resonator (MRR) implemented using the silicon-on- insulator (SOI) platform using local oxidation of silicon (LOCOS) approach. Following its fabrication, the device was characterized experimentally and an ultrahigh intrinsic Q-factor of ∼2 million with a free spectral range (FSR) of 2 nm was achieved, giving rise to a finesse of ∼1100, the highest demonstrated so far in SOI platform at the telecom band. We have further studied our device to analyze the source of losses that occur in the MRR and to understand the limits of the achievable Q-factor.