Robust formation of amorphous SbS on functionalized graphene for high-performance optoelectronic devices in the cyan-gap.

Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous SbS films with a bandgap of 2.8 eV.